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| Fig: Timing Diagram for Memory Write Machine Cycle |
The memory write timing diagram can be explained as below:
- The MP places the 16-bit memory address from the program counter on address bus. At time period T1, the higher order memory address is placed on the address lines A15 – A8. When ALE is high, the lower address is placed on the bus AD7 – AD0. The status signal IO/M(bar) goes low indicating the memory operation and two status signals S1 = 0, S0 = 1 to indicate memory write operation.
- At time period T2, the MP sends WR(bar) control line to enable the memory write. When memory is enabled with WR(bar) signal, the data from the processor is placed on the addressed location with ALE low.
- The data is reached at memory location during T3 state. When data is reached, the WR(bar) signal goes high. It causes the bus to go into high impedance state.
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ReplyDelete전자들이 양자 터널링으로 절연막을 통과한다고 해서 100% 유령처럼 지나가는 것은 아닙니다. 아주 낮은 확률로 전자가 벽(절연막) 중간에 박혀버리거나, 벽에 물리적인 상처를 입힙니다. 데이터를 쓰고 지우는 과정(터널링)을 수만 번 반복하면, 결국 튼튼했던 절연막이 너덜너덜해져서 전자가 줄줄 새어 나가게 됩니다.
ReplyDelete이것이 바로 오래 쓴 USB나 SSD가 결국 고장 나고 수명(Write Cycle)이 다하는 진짜 이유입니다.